High quality physical vapor deposited films with alternative molecular orientation.
نویسندگان
چکیده
منابع مشابه
Oligomer orientation in vapor-molecular-layer-deposited alkyl-aromatic polyamide films.
The surface-limited molecular-layer deposition of alkyl-aromatic polyamide films using sequential doses of 1,4-butane diamine (BDA) and terephthaloyl dichloride (TDC) is characterized using in situ quartz crystal microbalance and ex situ spectroscopy analysis. For the first time, near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is used to offer insight into molecular orientation ...
متن کاملHigh-quality AlN films grown on chemical vapor-deposited graphene films
We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented ...
متن کاملPreventing kinetic roughening in physical vapor-phase-deposited films.
The growth kinetics of the mostly used physical vapor-phase deposition techniques -molecular beam epitaxy, sputtering, flash evaporation, and pulsed laser deposition-is investigated by rate equations with the aim of testing their suitability for the preparation of ultraflat ultrathin films. The techniques are studied in regard to the roughness and morphology during early stages of growth. We de...
متن کاملPiezoresistivity in vapor-deposited diamond films
We report the observation of a very large piezoresistive effect in both polycrystalline and homoepitaxial chemical-vapor-deposited diamond films. The gauge factor for polycrystalline p-type diamond at 500 microstrains was found to be only 6 at room ambient, but increased rapidly with temperature, exceeding that of polycrystalline silicon (30) at 35 ‘C, and that of single-crystal Si (120) at 50 ...
متن کاملEffects of Hot Isostatic Pressure on Titanium Nitride Films Deposited by Physical Vapor Deposition
Films of titanium nitride deposited by physical vapor deposition on 304 L stainless steel substrates were hot isostatic pressed (HIP) under 150 MPa at 550 °C. To study the effects of this treatment on the microstructure of those films, X-ray diffraction analyses, Rutherford Backscattering spectroscopy, scanning electron microscopy, and atomic force microscopy were performed. Surface hardness, a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Kobunshi
سال: 1987
ISSN: 0454-1138,2185-9825
DOI: 10.1295/kobunshi.36.270